PDINN hole interface [3]: Doped with the below

[3]: Doped with the below concentrations

ETL and HBL material for photo-electronic devices

15 cd/A EQE@ 100 mA/cm2 6

With perylene as an electron-rich core and extended conjugations

PDINN hole interface [3]: Doped with the belowPDINN, used to improve device stability in non fullerene OSCs High quality material available online (or request a quote) for priority dispatch PDINN (CAS number 1020180 01 1), while compared with PDINO, can provide better contact with the electrodes and non fullerene active layers to give higher conductivity. PDINN also can reduce the work functions (WFs) of the metal cathode, making it a better candidate to use as cathode interlayer materials (CIMs)